Materials World Network: Understanding the Design and Characterization of Air-stable n-Type Charge Transfer Dopants for Organic Electronics | DFG


Funding period:Jan. 1, 2012 to Dec. 31, 2016
Agency: DFG

Acknowledgements

We acknowledge funding by the DFG project "Materials World Network: Understanding the Design and Characterization of Air-stable n-Type Charge Transfer Dopants for Organic Electronics" (DFG, grant agreement ID: NSF 11-568)


Description

Charge transfer doping is crucial in enabling highly efficient organic light emitting diodes and organic solar cells, and is needed for controlling the electrical characteristics of organic field effect transistors. Whereas the development of p-type dopants is well advanced, there is still a lack of effective air-stable solution processable n-type dopants, due to limited knowledge on the detailed doping mechanisms. To address this gap, this project aims at a) understanding the design rules for air-stable n-dopants based on a promising class of dopants with (1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl (DMBI) as the model system and b) understanding the detailed doping mechanisms of n-type doping. Our aim, within this cooperation project, is to study the doping effect on a single molecular level by high resolution scanning tunneling microscopy and model the doping process by ab initio calculations based on density functional theory

Materials World Network: Understanding the Design and Characterization of Air-stable n-Type Charge Transfer Dopants for Organic Electronics | DFG


Funding period:Jan. 1, 2012 to Dec. 31, 2016
Agency: DFG

Acknowledgements

We acknowledge funding by the DFG project "Materials World Network: Understanding the Design and Characterization of Air-stable n-Type Charge Transfer Dopants for Organic Electronics" (DFG, grant agreement ID: NSF 11-568)


Description

Charge transfer doping is crucial in enabling highly efficient organic light emitting diodes and organic solar cells, and is needed for controlling the electrical characteristics of organic field effect transistors. Whereas the development of p-type dopants is well advanced, there is still a lack of effective air-stable solution processable n-type dopants, due to limited knowledge on the detailed doping mechanisms. To address this gap, this project aims at a) understanding the design rules for air-stable n-dopants based on a promising class of dopants with (1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl (DMBI) as the model system and b) understanding the detailed doping mechanisms of n-type doping. Our aim, within this cooperation project, is to study the doping effect on a single molecular level by high resolution scanning tunneling microscopy and model the doping process by ab initio calculations based on density functional theory